Person:
González Díaz, Germán

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First Name
Germán
Last Name
González Díaz
URI
https://hdl.handle.net/20.500.14352/75016
Affiliation
Universidad Complutense de Madrid
Faculty / Institute
Ciencias Físicas
Department
Estructura de la Materia, Física Térmica y Electrónica
Area
Electrónica
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20231
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Author: Olea Ariza, Javier × Subject: 538.9 ×

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    Ti supersaturated Si by microwave annealing processes
    (Semiconductor Science and Technology, 2023) Olea Ariza, Javier; González Díaz, Germán; Pastor Pastor, David; García Hemme, Eric; Caudevilla Gutiérrez, Daniel; Algaidy, S.; Perez Zenteno, F.; Duarte Cano, S.; García Hernansanz, Rodrigo; Prado Millán, Álvaro Del; San Andrés Serrano, Enrique; Martil De La Plaza, Ignacio; Lee, Yao-Jen; Hong, Tzu-Chieh; Chao, Tien-Sheng
    Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.