Person:
González Díaz, Germán

Profile Picture
First Name
Germán
Last Name
González Díaz
URI
https://hdl.handle.net/20.500.14352/75016
Affiliation
Universidad Complutense de Madrid
Faculty / Institute
Ciencias Físicas
Department
Estructura de la Materia, Física Térmica y Electrónica
Area
Electrónica
Identifiers
UCM identifierORCIDScopus Author IDDialnet ID

Filters

1987 - 19892
Reset filters

Settings

End date: 1989 × Start date: 1987 ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres
    (Journal of Applied Physics, 1987) Martil De La Plaza, Ignacio; González Díaz, Germán; Sánchez Quesada, Francisco; Santamaría Sánchez-Barriga, Jacobo; Iborra, E.
    Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of stoichiometry of films giving rise to remarkable changes in the film properties. Variation of substrate temperature causes changes in film composition because of the variation of hydrogen reactivity at the substrate. Measurements of resistivity at variable temperatures indicate a hopping conduction mechanism through gap states for films grown at low temperature (100–250 °C), the existence of three acceptor levels at about 0.046, 0.098, and 0.144 eV above valence band for films grown at intermediate temperature (250–350 °C), and a pseudometallic behavior for film grown at high temperatures (350–450 °C). Chalcopyrite polycrystalline thin films of CuInSe2 with an average grain size of 1 μm, an optical gap of 1.01 eV, and resistivities from 10− 1 to 103 Ω cm can be obtained by adding 1.5% of H2 to the sputtering atmosphere and by varying the substrate temperature from 300 to 400 °C.
  • Thumbnail Image
    Item
    Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
    (Journal of Applied Physics, 1989) Martil De La Plaza, Ignacio; González Díaz, Germán; Sánchez Quesada, Francisco; Santamaría Sánchez-Barriga, Jacobo; Iborra, E.
    All‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In‐rich CuInSe2 layers) and type 2 heterojunctions (based on Cu‐rich CuInSe2 layers). In type 1 heterojunctions, a 80‐meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2 eV− 1 (type 1) and in the range 101 2–101 3 cm− 2 eV− 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm− 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm− 3 for the CdS (type 2 heterojunction) have been deduced from C‐Vmeasurements.