High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

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This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated.
© 2017 IOP Publishing Ltd. The authors acknowledge the 'CAI de Técnicas Físicas', the 'CAI de Espectroscopía', 'CAI de Difracción de Rayos X' and 'Centro Nacional de Microscopía Electrónica' of the Universidad Complutense de Madrid for sample fabrication, FTIR, GIXRD and HRTEM measurements, respectively. This work was funded by the project TEC2010-18051 from the Spanish 'Ministerio de Economía y Competitividad', the 'Formación de Personal Investigador' program under grant BES-2011-043798, and the 'Juan de la Cierva-Formación' program under grant FJCI-2014-19643.
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