TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2001
DO  - 10.1116/1.1339010
SN  - 1071-1023
UR  - https://hdl.handle.net/20.500.14352/59117
T2  - Journal of Vacuum Science & Technology B
AB  - We have studied the influence of nitrogen plasma exposure of the InP surface on the electrical characteristics of electron cyclotron resonance deposited Al/SiNx:H/InP devices. Nitrogen plasma exposure was performed just before the SiNx:H deposition...
M2  - 186
PB  - AVS Amer Inst. Physics
KW  - Insulator-Semiconductor Devices
KW  - InP Surfaces
KW  - Interface
KW  - Passivation
KW  - Layers
KW  - Nitridation.
TI  - Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures
TY  - journal article
VL  - 19
ER  -