RT Journal Article
T1 Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
A1 Velazco, Raoul
A1 Clemente Barreira, Juan Antonio
A1 Hubert, Guillaume
A1 Mansour, Wassim
A1 Palomar Trives, Carlos
A1 Franco Peláez, Francisco Javier
A1 Baylac, Maud
A1 Rey, Solenne
A1 Rosetto, Olivier
A1 Villa, Francesca
AB Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of magnitude below those of typical CMOS SRAMs in the same technology node. MUSCA SEP3 simulations complement these results predicting that only high-energy neutrons ( > 30 MeV) can provoke bit flips in the studied SRAMs. MUSCA SEP3 is also used to investigate the sensitivity of the studied SRAM to radioactive contamination and to compare it with the one of standard CMOS SRAMs. Results are useful to make predictions about the operation of this memory in environments such as avionics.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 0018-9499
YR 2014
FD 2014-12
LK https://hdl.handle.net/20.500.14352/33823
UL https://hdl.handle.net/20.500.14352/33823
LA eng
NO (c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
NO Ministerio de Economía y Competitividad (MINECO)
NO Universidad Complutense de Madrid
NO Banco Santander
DS Docta Complutense
RD 26 abr 2025