TY  - JOUR
AU  - Velazco, Raoul
AU  - Clemente Barreira, Juan Antonio
AU  - Hubert, Guillaume
AU  - Mansour, Wassim
AU  - Palomar Trives, Carlos
AU  - Franco Peláez, Francisco Javier
AU  - Baylac, Maud
AU  - Rey, Solenne
AU  - Rosetto, Olivier
AU  - Villa, Francesca
PY  - 2014
DO  - 10.1109/TNS.2014.2363899
SN  - 0018-9499
UR  - https://hdl.handle.net/20.500.14352/33823
T2  - IEEE transactions on nuclear science
AB  - Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These...
LA  - eng
M2  - 3103
PB  - IEEE-Inst Electrical Electronics Engineers Inc
KW  - CMOS integrated circuits
KW  - DRAM chips
KW  - SRAM chips
KW  - Capacitors
KW  - Contamination
KW  - Neutron effects
KW  - Radiation hardening (electronics)
KW  - CMOS SRAM
KW  - COTS soft-error free SRAM
KW  - DRAM capacitors
KW  - MUSCA SEP3 simulations
KW  - SRAM cells
KW  - Cross-section values
KW  - Electron volt energy 15 MeV
KW  - High-energy neutrons
KW  - Memory cell design
KW  - Neutron radiation
KW  - Radiation tests
KW  - Radioactive contamination
KW  - Error analysis
KW  - Neutrons
KW  - Reliability
KW  - Single event upsets
KW  - COTS
KW  - LPSRAM
KW  - MUSCA SEP3
KW  - SRAM
KW  - Neutron tests
KW  - Radiation hardness
KW  - Soft error
TI  - Evidence of the robustness of a COTS soft-error free SRAM to neutron radiation
TY  - journal article
VL  - 61
ER  -