TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - Prado Millán, Álvaro Del
PY  - 2000
DO  - 10.1063/1.1305548
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59222
T2  - Journal of Applied Physics
AB  - The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is above...
LA  - eng
M2  - 2149
PB  - American Institute of Physics
KW  - Electron-Cyclotron-Resonance
KW  - Deposited Silicon-Nitride
KW  - Amorphous-Silicon
KW  - Oxygen-Content.
TI  - Defect structure of SiNx : H films and its evolution with annealing temperature
TY  - journal article
VL  - 88
ER  -