TY  - JOUR
AU  - Sochinskii, N. V.
AU  - Dieguez, E.
AU  - Pal, U.
AU  - Piqueras De Noriega, Francisco Javier
AU  - Fernández Sánchez, Paloma
AU  - Agullorueda, F.
PY  - 1995
DO  - 10.1088/0268-1242/10/6/020
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/59259
T2  - Semiconductor Science and Technology
AB  - Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has been...
LA  - eng
M2  - 870
PB  - Iop Publishing Ltd
KW  - Crystals
KW  - Growth
TI  - Elimination of Te precipitates from CdTe wafers
TY  - journal article
VL  - 10
ER  -