RT Journal Article
T1 Electrolyte gated synaptic transistor based on an ultra-thin film of La0.7Sr0.3MnO3
A1 López Montes, Alejandro
A1 Tornos Castillo, Javier
A1 Peralta, Andrea
A1 Barbero, Isabel
A1 Fernández Cañizares, Francisco
A1 Sánchez Santolino, Gabriel
A1 Varela Del Arco, María
A1 Rivera Calzada, Alberto Carlos
A1 Camarero, Julio
A1 León Yebra, Carlos
A1 Santamaría Sánchez-Barriga, Jacobo
A1 Romera, Miguel
A1 Romera Rabasa, Miguel Álvaro
AB Developing electronic devices capable of reproducing synaptic functionality is essential in the context of implementing fast, low-energy consumption neuromorphic computing systems. Hybrid ionic/electronic three-terminal synaptic transistors are promising as efficient artificial synapses since they can process information and learn simultaneously. In this work, an electrolyte-gated synaptic transistor is reported based on an ultra-thin epitaxial La0.7Sr0.3MnO3 (LSMO) film, a half-metallic system close to a metal-insulator transition. The dynamic control of oxygen composition of the manganite ultra-thin film with voltage pulses applied through the gate terminal allows reversible modulation of its electronic properties in a non-volatile manner. The conductance modulation can be finely tuned with the amplitude, duration, and number of gating pulses, providing different alternatives to gradually update the synaptic weights. The transistor implements essential synaptic features such as excitatory postsynaptic potential, paired-pulse facilitation, long-term potentiation/depression of synaptic weights, and spike-time-dependent plasticity. These results constitute an important step toward the development of neuromorphic computing devices leveraging the tunable electronic properties of correlated oxides, and pave the way toward enhancing future device functionalities by exploiting the magnetic (spin) degree of freedom of the half metallic transistor channel.
PB Wiley Open Access
YR 2023
FD 2023-04-28
LK https://hdl.handle.net/20.500.14352/96986
UL https://hdl.handle.net/20.500.14352/96986
LA eng
NO A. López, J. Tornos, A. Peralta, I. Barbero, F. Fernandez-Canizares, G. Sanchez-Santolino, M. Varela, A. Rivera, J. Camarero, C. León, J. Santamaría, M. Romera, Electrolyte Gated Synaptic Transistor based on an Ultra-Thin Film of La0.7Sr0.3MnO3. Adv. Electron. Mater. 2023, 9, 2300007. https://doi.org/10.1002/aelm.202300007
NO Unión Europea
NO Ministerio de Ciencia e Innovación (España)
DS Docta Complutense
RD 10 abr 2025