RT Journal Article
T1 Thermal stability of intermediate band behavior in Ti implanted Si
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Olea Ariza, Javier
AB Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. Thermal stability of this new material is analyzed by means of isochronal annealing in thermodynamic equilibrium conditions at increasing temperature. A progressive deactivation of the IB behavior is shown during thermal annealing, and structural and electrical measurements are reported in order to find out the origin of this result.
PB Elsevier Science BV
SN 0927-0248
YR 2010
FD 2010-11
LK https://hdl.handle.net/20.500.14352/44239
UL https://hdl.handle.net/20.500.14352/44239
LA eng
NO © 2010 Elsevier B.V. All rights reserved. The authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements and C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation and e-beam evaporation experiments. This work was made possible thanks to the FPI (Grant no .BES-2005-7063) of the Ministerio de Educación y Ciencia de España. This work was partiallys upported by the Projects NUMANCIA-II (No. S2009ENE-1477) funded by the Comunidad de Madrid and GENESIS-FV (No. CSD2006-00004) funded by the Spanish Consolider National Programme.
NO Comunidad de Madrid
NO FPI  of the Ministerio de Educación y Ciencia de España
NO Spanish Consolider National Programme
DS Docta Complutense
RD 11 abr 2025