RT Journal Article T1 Microelectrical characterisation of diamond films: an attempt to understand the structural influence on electrical transport phenomena A1 Pereira, L. A1 Pereira, E. A1 Gomes, H. A1 Rodrigues, A. A1 Rees, A. A1 Cremades Rodríguez, Ana Isabel A1 Piqueras de Noriega, Javier AB The properties of microelectrical conduction in microwave plasma assisted chemical vapour deposition (MPCVD) diamond films were investigated using an atomic force microscopy probe, giving a morphological map of the electrical conduction with a spatial resolution better than 500 nm. Also, a cathodoluminescence map with a spatial resolution of about 1 mu m was obtained, giving the possibility of correlating the defects involved in the different carrier transport phenomena. Using micro-Raman analysis several bands could be identified. It is found that the defects responsible for the cathodoluminescence (CL) blue band are responsible for the major part of the electrical conduction in diamond films, while the defects localised in < 111 > surfaces, responsible for the green CL emission, could be involved in a less conductive process. PB Elsevier Science SA SN 0925-9635 YR 2000 FD 2000-04 LK https://hdl.handle.net/20.500.14352/58817 UL https://hdl.handle.net/20.500.14352/58817 LA eng NO [1] A.T. Collins, Mater. Sci. Eng. B 11 (1992) 257.[2] K. Tsugawa, K. Kitatani, H. Noda, A. Hokazono, K. Hirose, M. Tajima, H. Kawarada, Diamond Relat. Mater. 8 (1999) 927.[3] H.J. Looi, L.Y.S. Pang,M.D.Whitfield, J.S. Ford, R.B. Jackman, Diamond Relat. Mater. 8 (1999) 966. [4] D.M. Malta, J.A. von Windheim, H.A. Wynands, B.A. Fox, J. Appl. Phys. 77 (1995) 1536.[5] P. Gonon, A. Deneuville, F. Fontaine, E. Gheeraert, J. Appl. Phys. 78 (1995) 6633.[6] R.B. Jackman, J. Beckman, J.S. Foord, Diamond Relat. Mater. 4 (1995) 735.[7] S.A. Stuart, S. Prawer, P.S. Weiser, Diamond Relat. Mater. 2 (1993) 735.[8] Y. Bounouh, M.L. The´ye, A. Dehbi-Alaoui, A. Mathewes, J.P. Stoquert, Phys. Rev. B 51 (1995) 9597.[9] R.E. Shroder, R.J. Nemanich, J.T. Glass, Phys. Rev. B 41 (1990) 3783.[10] J.J. Schermer, W.P.J. van Enckvort, L.J. Giling, Diamond Relat.Mater. 3 (1994) 408.[11] E. Pereira, L. Pereira, R. Raue, Diamond Relat. Mater. 1 (1992) 910.[12] L.H. Robins, L.P. Cook, E.N. Farabaugh, A. Feldman, Phys. B 39 (1989) 13 367.[13] A.T. Collins, M. Kamo, Y. Sato, J. Phys. D 22 (1989) 1402.[14] R.J. Graham, T.D. Moustakas, M.M. Disko, J. Appl. Phys. 69 (1991) 3212.[15] A. Cremades, F. Domínguez-Adame, J. Piqueras, J. Appl. Phys.74 (1993) 5726.[16 ] D.M. Malta, J.A. von Windhein, H.A. Wynands, B.A. Fox, J.. Appl. Phys. 77 (1994) 1536.[17] B. Fiegl, R. Kuhnert, M. Ben-Chorin, F. Koch, Appl. Phys. Lett.65 (1994) 317.[18] A.T. Collins, Diamond Relat. Mater. 1 (1992) 457.[19] L. Pereira, E. Pereira, A. Cremades, J. Piqueras, Diamond Relat. Mater. 5 (1996) 1189.[20] L. Pereira, E. Pereira, A. Cremades, J. Piqueras, J. Jiménez, J.M. Bielza, Diamond Relat. Mater. 8 (1999) 1333. NO © 2000 Elsevier Science S.A. All rights reserved.European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (10. 199. Praga. Republica Checa).The authors wish to thank Dr. Qi Hua Fan and Mr. A.J. Fernandes for the growth facilities. DS Docta Complutense RD 4 may 2024