TY  - CHAP
AU  - Lorenz, K.
AU  - Nogales Díaz, Emilio
AU  - Nédélec, R.
AU  - Penner, J.
AU  - Vianden, R.
AU  - Alves, E.
AU  - Martin, R.W.
AU  - O`Donnell, K.P.
PY  - 2006
DO  - 10.1557/proc-0892-ff23-15
SN  - 1-55899-846-2
UR  - https://hdl.handle.net/20.500.14352/53571
AB  - GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ⁰C in vacuum, in flowing nitrogen gas or a mixture of NH₃ and N₂. Rutherford backscattering spectrometry in the channeling mode was used to...
LA  - eng
PB  - Materials Research Soc
KW  - Devices
TI  - Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
TY  - book part
ER  -