RT Journal Article
T1 Study of growth hillocks in GaN : Si films by electron beam induced current imaging
A1 Zaldivar, M.H.
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
AB Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks.
PB American Institute of Physics
SN 0021-8979
YR 2001
FD 2001-07-15
LK https://hdl.handle.net/20.500.14352/59122
UL https://hdl.handle.net/20.500.14352/59122
LA eng
NO © 2001 American Institute of Physics.This work was supported by MCYT-DGI (Project No. MAT2000-2119). M.H.Z. thanks AECI and CoNaCyT for a research grant.
NO MCYT-DGI
NO AECI
NO CoNaCyT
DS Docta Complutense
RD 6 jul 2025