TY  - JOUR
AU  - Zaldivar, M.H.
AU  - Fernández Sánchez, Paloma
AU  - Piqueras De Noriega, Francisco Javier
PY  - 2001
DO  - 10.1063/1.1379773
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59122
T2  - Journal of Applied Physics
AB  - Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while...
LA  - eng
M2  - 1058
PB  - American Institute of Physics
KW  - Grain-Boundaries
TI  - Study of growth hillocks in GaN : Si films by electron beam induced current imaging
TY  - journal article
VL  - 90
ER  -