RT Book, Section
T1 Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
A1 Martil De La Plaza, Ignacio
A1 García Hemme, Eric
A1 García Hernansanz, Rodrigo
A1 González Díaz, Germán
A1 Olea Ariza, Javier
A1 Prado Millán, Álvaro Del
A2 García, Héctor
A2 Castán, Elena
AB We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.
PB IEEE
SN 978-1-4673-4666-5
YR 2013
FD 2013
LK https://hdl.handle.net/20.500.14352/45519
UL https://hdl.handle.net/20.500.14352/45519
LA eng
NO Spanish Conference on Electron Devices (9.2013.Valladolid, España). Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken.
NO Comunidad de Madrid
NO MICINN
DS Docta Complutense
RD 6 abr 2025