TY  - CHAP
AU  - Martil De La Plaza, Ignacio
AU  - García Hemme, Eric
AU  - García Hernansanz, Rodrigo
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
AU  - Prado Millán, Álvaro Del
A4  - García, Héctor
A4  - Castán, Elena
PY  - 2013
DO  - 10.1109/CDE.2013.6481421
SN  - 978-1-4673-4666-5
UR  - https://hdl.handle.net/20.500.14352/45519
AB  - We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB)...
LA  - eng
M2  - 377
PB  - IEEE
KW  - Hall Mobility
KW  - Eemental Semiconductors
KW  - Energy Gap
KW  - Ion Implantation
KW  - Laser Materials Processing
KW  - Melting
KW  - Semiconductor Thin Films
KW  - Silicon
KW  - Titanium
KW  - Vanadium.
TI  - Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
TY  - book part
ER  -