RT Journal Article
T1 Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics
A1 Feijoo, Pedro Carlos
A1 Pampillón, María Ángela
A1 San Andrés Serrano, Enrique
A1 Fierro, José Luis
AB Gd-rich gadolinium scandate (Gd2–xScxO3) was deposited by high-pressure sputtering on (1 0 0) silicon by alternating the deposition of <0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2–xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF–VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6 × 1011 eV–1 cm–2.
PB IOP Science
SN 0268-1242
YR 2013
FD 2013-05-31
LK https://hdl.handle.net/20.500.14352/98293.2
UL https://hdl.handle.net/20.500.14352/98293.2
LA eng
NO Feijoo, P. C., et al. «Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics». Semiconductor Science and Technology, vol. 28, n.o 8, agosto de 2013, p. 085004. DOI.org (Crossref), https://doi.org/10.1088/0268-1242/28/8/085004.
NO Está depositada la versión preprint del artículo
NO Ministerio de Economía y Competitividad (España)
DS Docta Complutense
RD 19 abr 2025