TY  - JOUR
AU  - Feijoo, Pedro Carlos
AU  - Pampillón, María Ángela
AU  - San Andrés Serrano, Enrique
AU  - Fierro, José Luis
PY  - 2013
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/98293.2
T2  - Semiconductor Science and Technology
AB  - Gd-rich gadolinium scandate (Gd2–xScxO3) was deposited by high-pressure sputtering on (1 0 0) silicon by alternating the deposition of <0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after...
LA  - eng
M2  - 085004-1
PB  - IOP Science
TI  - Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics
TY  - journal article
VL  - 28
ER  -