RT Journal Article
T1 Study of structural defects limiting the luminescence of InGaN single quantum wells
A1 Cremades Rodríguez, Ana Isabel
A1 Piqueras De Noriega, Francisco Javier
A1 Albrecht, M.
A1 Stutzmann, M.
A1 Strunk, H.P.
AB InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation, Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.
PB Elsevier Science Sa
SN 0921-5107
YR 2002
FD 2002-03-22
LK https://hdl.handle.net/20.500.14352/58812
UL https://hdl.handle.net/20.500.14352/58812
LA eng
NO © 2001 Elsevier Science B.V. All rights reserved.Bi-Annual Meeting of the International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (5. 2000. Heralkion, Grecia). (EXMATEC 2000).Thanks are due to Prof. Scholz for providing thesamples. This work was supported by project PB96-0639 (DGES)
NO DGES
DS Docta Complutense
RD 10 abr 2025