RT Journal Article
T1 Modeling the Nonlinear Response of Silicon Photomultipliers
A1 Rosado Vélez, Jaime
AB A statistical model of the nonlinear response of silicon photomultipliers is presented. It includes losses of both the photodetection efficiency and the gain during pixel recovery periods as well as the effect of correlated and uncorrelated noise. The model provides either the mean output charge of a SiPM for incident light pulses of arbitrary shape or the output current for continuous light. The dependence of the SiPM response on both the overvoltage and the pulse shape is also properly described. The model has been validated for two different silicon photomultipliers using scintillation light pulses from a LYSO crystal as well as continuous light from a LED. Good agreement is found with experimental data at moderate nonlinearity.
PB Institute of Electrical and Electronics Engineers
SN 1530-437X
YR 2019
FD 2019
LK https://hdl.handle.net/20.500.14352/88577
UL https://hdl.handle.net/20.500.14352/88577
LA eng
NO Rosado, J. (2019). Modeling the nonlinear response of silicon photomultipliers. IEEE Sensors Journal, 19(24), 12031-12039. https://doi.org/10.1109/JSEN.2019.2938018
NO Se deposita la versión preprint del artículo
NO Ministerio de Economía, Comercio y Empresa (España)
DS Docta Complutense
RD 7 abr 2025