TY  - JOUR
AU  - González Díaz, Germán
AU  - Artús, L.
AU  - Blanco, N
AU  - Cuscó, R.
AU  - Hernández, S.
PY  - 2003
DO  - 10.1063/1.1542659
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51254
T2  - Journal of Applied Physics
AB  - Raman scattering has been used to study the lattice recovery and electrical activation of Si+-implanted In0.53Ga0.47 As achieved by rapid thermal annealing. The degree of crystallinity recovery, of totally amorphized samples is studied for annealing...
LA  - eng
M2  - 2659
PB  - American Institute of Physics
KW  - Spectroscopy
KW  - Ga1-xNxAs
KW  - Mode
TI  - Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering
TY  - journal article
VL  - 93
ER  -