RT Journal Article
T1 Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º  ↔ (√3x√3) R30º transition on Sn/Si (111)∶B
A1 Abuín Herráez, Manuel
AB Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.
PB American Physical Society
SN 0031-9007
YR 2015
FD 2015-05-13
LK https://hdl.handle.net/20.500.14352/23154
UL https://hdl.handle.net/20.500.14352/23154
LA eng
NO Srour, W., et al. «Ultrafast Atomic Diffusion Inducing a Reversible ( 2 3 × 2 3 ) R 30 ° ↔ ( 3 × 3 ) R 30 ° Transition on Sn / Si ( 111 ) ∶ B». Physical Review Letters, vol. 114, n.o 19, mayo de 2015, p. 196101. DOI.org (Crossref), https://doi.org/10.1103/PhysRevLett.114.196101.
NO © 2015 American Physical Society.This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-R.W. S. and D. G. T. contributed equally to this work.Articulo firmado por más de 10 autores.
NO Ministerio de Economía, Comercio y Empresa (España)
NO French Agence Nationale de la Recherche
DS Docta Complutense
RD 21 abr 2025