RT Journal Article
T1 Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
A1 Baldrati, Lorenzo
A1 Rinaldi, Christian
A1 Manuzzi, Alberto
A1 Asa, Marco
A1 Aballe, Lucía
A1 Foerster, Michael
A1 Biskup Zaja, Nevenko
A1 Varela Del Arco, María
A1 Cantoni, Matteo
A1 Bertacco, Riccardo
AB Electronic, magnetic, chemical, and mechanical phenomena occurring in metal/oxide heterostructures have recently received great attention in view of their exploitation in novel solid state devices. In particular, artificial multiferroics, i.e., layered or composite systems made of a ferromagnetic and ferroelectric phase, hold potential for achieving the electric control of the magnetization in spintronic devices. In this paper, a novel artificial multiferroic displaying perpendicular magnetic anisotropy is reported: the CoFeB/BaTiO3 bilayer. At room temperature, the CoFeB magnetic coercive field displays a hysteretic behavior, as a function of the voltage across the BaTiO3 layer, with a 60% variation for complete reversal of the ferroelectric BaTiO3 polarization. This is exploited to achieve the electric switching of the magnetization of individual CoFeB electrodes under a uniform magnetic bias field. Upon the local BaTiO3 polarization reversal, the CoFeB electrode jumps from an initial metastable state into the opposite stable magnetization state, with a characteristic switching time determined by magnetic viscosity. The magnetically assisted bipolar electric switching of the magnetization is demonstrated, via voltage pulses compatible with complementary metal-oxide semiconductor (CMOS) electronics, under uniform bias fields as low as 10 Oe.
PB Wiley. Online library
YR 2016
FD 2016-06
LK https://hdl.handle.net/20.500.14352/104692
UL https://hdl.handle.net/20.500.14352/104692
LA eng
NO Baldrati L., Rinaldi C., Manuzzi A., Asa M., Aballe L., Foerster M., Biškup N., Varela M., Cantoni M., Bertacco R. (2016). Electrical Switching of Magnetization in the Artificial Multiferroic CoFeB/BaTiO3. Adv. Electron. Mater., 2: 1600085. doi: 10.1002/aelm.201600085
NO Fondazione Cariplo
NO Ministry of Research (Italy)
NO Fundación BBVA
NO Ministerio de Economia y Competitividad (España)
DS Docta Complutense
RD 4 abr 2025