RT Journal Article
T1 Yttria-stabilized zirconia/SrTiO_(3) oxide heteroepitaxial interface with symmetry discontinuity
A1 Scigaj, M.
A1 Dix, N.
A1 Cabero Piris, Mariona
A1 Rivera Calzada, Alberto Carlos
A1 Santamaría Sánchez-Barriga, Jacobo
A1 Fontcuberta, J.
AB We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO_(3)(110) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with [110]YSZ(001)//[001]SrTiO_(3)(110) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO_(3)(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities.
PB Amer Inst Physics
SN 0003-6951
YR 2014
FD 2014-06-23
LK https://hdl.handle.net/20.500.14352/34929
UL https://hdl.handle.net/20.500.14352/34929
LA eng
NO © 2014 AIP Publishing LLC. Financial support by the Spanish Government [Project Nos. MAT2011-29269-CO3 and NANOSELECT CSD2007- 00041] and Generalitat de Catalunya (No. 2009 SGR 00376) is acknowledged.
NO Ministerio de Economía y Competitividad (MINECO)
NO Generalitat de Catalunya
DS Docta Complutense
RD 10 may 2025