RT Journal Article
T1 On a quasilinear degenerate system arising in semiconductor theory. Part II: Localization of vacuum solutions
A1 Díaz Díaz, Jesús Ildefonso
A1 Galiano, Gonzalo
A1 Jungel, Ansgar
AB The temporal and spatial localization of vacuum sets of the solutions to the drift-diffusion equations for semiconductors is studied in this paper. It is shown that if there are vacuum sets initially then there are vacuum sets for a small time, which shows the finite propagation speed of the support of the densities. It is also shown that for a certain recombination-generation rate there is no dilation of the initial support, and under some condition on the recombination-generation rate the vacuum will develop after a certain time even if there is no vacuum initially. These results are proved based on a local energy method for free boundary problems.
PB Pergamon Elsevier Science Ltd
SN 0362-546X
YR 1999
FD 1999-06-01
LK https://hdl.handle.net/20.500.14352/57367
UL https://hdl.handle.net/20.500.14352/57367
LA eng
DS Docta Complutense
RD 11 abr 2025