RT Journal Article
T1 Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps
A1 Hidalgo Alcalde, Pedro
A1 Palais, O.
A1 Martinuzzi, S.
AB By means of a contactless microwave phase shift technique, the minority carrier lifetime and surface recombination velocity were measured in multicrystalline silicon wafers containing iron and chromium. The bulk lifetime can be deduced, leading to the determination of the concentration of interstitial iron [Fe-i] associated with boron, after pair dissociation annealing at 210 degreesC. It is found that [Fe-i] is higher in the vicinity of extended defects but decreases at the defects because the iron segregates irrespective of boron concentration and does not form pairs.
PB Iop Publishing Ltd
SN 0953-8984
YR 2004
FD 2004
LK https://hdl.handle.net/20.500.14352/51060
UL https://hdl.handle.net/20.500.14352/51060
LA eng
NO © 2004 IOP Publishing Ltd.International Workshop on Beam Injection Assessment of Microstructures in Semconductors. (7. 2003. Lille. Francia).This work was sponsored by CNRS/ADEME (France), by Conseils Regional (PACA) and General (13)-France and by Secretaria General Educacion y Universidades (Spain).
NO CNRS/ADEME (France)
NO Conseils Regional (PACA)
NO General (13)-France
NO Secretaria General Educacion y Universidades (Spain).
DS Docta Complutense
RD 11 abr 2025