RT Journal Article
T1 Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells
A1 García Hernansanz, Rodrigo
A1 García Hemme, Eric
A1 Montero Álvarez, Daniel
A1 Prado Millán, Álvaro Del
A1 Olea Ariza, Javier
A1 San Andrés Serrano, Enrique
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
AB We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications.
PB Institute of Electrical and Electronics and Engineers (IEEE)
SN 2156-3381
YR 2016
FD 2016
LK https://hdl.handle.net/20.500.14352/24640
UL https://hdl.handle.net/20.500.14352/24640
LA eng
NO © 2016 IEEE.This work was supported in part by the Project MADRID-PV (under Grant 2013/MAE-2780) funded by the Comunidad de Madrid, by the Spanish Ministerio de Economía y Competitividad (MINECO) under Grant TEC 2013-41730-R and Grant TEC2016-75099-R, and by the Universidad Complutense de Madrid (Programa de Financiación de Grupos de Investigación UCM–Banco Santander) under Grant 910173-2014. The work of D. Montero was supported by the Spanish MINECO under Contract BES-2014-067585.
NO Ministerio de Economía y Competitividad (MINECO), España
NO Comunidad de Madrid
NO Programa de Financiación de Grupos de Investigación UCM–Banco Santander
NO Universidad Complutense de Madrid (UCM)
NO Banco Santander Central Hispano (BSCH)
DS Docta Complutense
RD 18 abr 2025