TY  - JOUR
AU  - García Hernansanz, Rodrigo
AU  - García Hemme, Eric
AU  - Montero Álvarez, Daniel
AU  - Prado Millán, Álvaro del
AU  - Olea Ariza, Javier
AU  - San Andrés Serrano, Enrique
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2016
DO  - 10.1109/JPHOTOV.2016.2581487
SN  - 2156-3381
UR  - https://hdl.handle.net/20.500.14352/24640
T2  - IEEE journal of photovoltaics
AB  - We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with...
LA  - eng
PB  - Institute of Electrical and Electronics and Engineers (IEEE)
KW  - Silicon
KW  - Photovoltaic cells
KW  - Substrates
KW  - Absorption
KW  - Surface treatment
KW  - Plasmas
KW  - Temperature
KW  - Measurement minority lifetime
KW  - Electron cyclotron resonance chemical vapor deposition (ECR-CVD)
KW  - heterojunction
KW  - interface defects
KW  - metal insulator semiconductor (MIS) devices
TI  - Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells
TY  - journal article
VL  - 6
ER  -