%0 Journal Article
%A Gourbilleau, F.
%A Ternon, C.
%A Maestre Varea, David
%A Palais, O.
%A Dufour, C.
%T Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
%D 2009
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/42751
%X Si-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient α (in cm^(-1)) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si ncls.
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