RT Journal Article
T1 Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
A1 Gourbilleau, F.
A1 Ternon, C.
A1 Maestre Varea, David
A1 Palais, O.
A1 Dufour, C.
AB Si-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient α (in cm^(-1)) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si ncls.
PB American Institute of Physics
SN 0021-8979
YR 2009
FD 2009-07-01
LK https://hdl.handle.net/20.500.14352/42751
UL https://hdl.handle.net/20.500.14352/42751
LA eng
NO © 2009 American Institute of PhysicsSome of the authors want to thank Pr Xavier Portier for performing some of the HREM observations. This work has been supported by the ANR Solaire Photovoltaique through the DUOSIL project.
NO ANR Solaire Photovoltaique
DS Docta Complutense
RD 6 abr 2025