%0 Journal Article
%A Miranda Pantoja, José Miguel
%A Sebastián Franco, José Luis
%T Microwave noise modeling of InP based MODFETs biased for low power consumption
%D 2000
%@ 1051-8207
%U https://hdl.handle.net/20.500.14352/58946
%X This paper presents the fabrication, experimental characterization and modeling of 0.15 mum gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T-D) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed, In fact, T-D can decrease with increasing drain currents, and suffers a strong increase as a function of the drain voltage even at very low values of the drain current. However, all of these effects can be qualitatively explained from physical considerations.
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