RT Journal Article
T1 Microwave noise modeling of InP based MODFETs biased for low power consumption
A1 Miranda Pantoja, José Miguel
A1 Sebastián Franco, José Luis
AB This paper presents the fabrication, experimental characterization and modeling of 0.15 mum gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T-D) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed, In fact, T-D can decrease with increasing drain currents, and suffers a strong increase as a function of the drain voltage even at very low values of the drain current. However, all of these effects can be qualitatively explained from physical considerations.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 1051-8207
YR 2000
FD 2000-11
LK https://hdl.handle.net/20.500.14352/58946
UL https://hdl.handle.net/20.500.14352/58946
LA eng
NO © 2000 IEEE.
DS Docta Complutense
RD 8 abr 2025