TY  - JOUR
AU  - Miranda Pantoja, José Miguel
AU  - Sebastián Franco, José Luis
PY  - 2000
DO  - 10.1109/75.888835
SN  - 1051-8207
UR  - https://hdl.handle.net/20.500.14352/58946
T2  - IEEE Microwave and Guided Wave Letters
AB  - This paper presents the fabrication, experimental characterization and modeling of 0.15 mum gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T-D) with the applied...
LA  - eng
M2  - 469
PB  - IEEE-Inst Electrical Electronics Engineers Inc
KW  - Gate.
TI  - Microwave noise modeling of InP based MODFETs biased for low power consumption
TY  - journal article
VL  - 10
ER  -