RT Journal Article
T1 Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras De Noriega, Francisco Javier
A1 Popa, V.
A1 Cojocaru, A.
A1 Tiginyanu, M.
AB The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence (CL) in the scanning electron microscope. Columnar structures with diameters of 150-250 nm formed near the surface of the as-grown GaN layers branch into nanowires with diameters of 20-60 nm, while islands with coral-like relief were observed at the bottom of the etched areas. CL emission of the observed nanostructures is dominated by free electron to acceptor transitions. Local CL spectra provide direct evidence of the existence of either compressive or tensile stress in different nanostructures. No free exciton luminescence was observed in GaN nanowires, supporting their relation to threading dislocations.
PB Amer Inst Physics
SN 0003-6951
YR 2005
FD 2005-05-30
LK https://hdl.handle.net/20.500.14352/51117
UL https://hdl.handle.net/20.500.14352/51117
LA eng
NO © 2005 American Institute of Physics.This work was supported by MCYT through Project No. MAT2003-00455 and the U.S. Civilian Research and Development Foundation under Grant No. MR2-995.
NO MCYT
NO U.S.  Civilian Research and Development Foundation
DS Docta Complutense
RD 3 abr 2025