TY  - JOUR
AU  - Díaz-Guerra Viejo, Carlos
AU  - Piqueras De Noriega, Francisco Javier
AU  - Popa, V.
AU  - Cojocaru, A.
AU  - Tiginyanu, M.
PY  - 2005
DO  - 10.1063/1.1940734
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/51117
T2  - Applied Physics Letters
AB  - The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence (CL) in the scanning electron microscope. Columnar structures with diameters of 150-250 nm formed near the surface of...
LA  - eng
PB  - Amer Inst Physics
KW  - Molecular-Beam Epitaxy
KW  - Vapor-Phase-Epitaxy
KW  - Defects
KW  - Photoluminescence
KW  - Films
TI  - Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
TY  - journal article
VL  - 86
ER  -