%0 Journal Article
%A Martil De La Plaza, Ignacio
%A Bravo, D.
%A Fernández, M.
%A García, S.
%A López, F.J.
%T Role of oxygen on the dangling bond configuration of low oxygen content SiNx :H films deposited at room temperature
%D 1995
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/59306
%X SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For the N-rich films they are of the form . Si=(N-3), whereas for the films with similar [N]/[Si] ratio but containing oxygen, the predominant defect is proposed to be Si=(Si2O), despite of the high N content and the low O content of these films. The spin density of the films has been related to the bonds that hydrogen establishes (either Si-H or N-H), with the maximum value corresponding to the minimum hydrogen content. Both maximum and minimum values, respectively, are obtained at the silicon percolation limit of the Si-Si bonds into the SiNx:H network, x similar to 1.10.
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