TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - Bravo, D.
AU  - Fernández, M.
AU  - García, S.
AU  - López, F.J.
PY  - 1995
DO  - 10.1063/1.114892
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/59306
T2  - Applied physics letters
AB  - SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For the...
LA  - eng
M2  - 3263
PB  - American Institute of Physics
KW  - Electron-Spin-Resonance
KW  - Silicon-Nitride
KW  - Defects
KW  - PECVD.
TI  - Role of oxygen on the dangling bond configuration of low oxygen content SiNx :H films deposited at room temperature
TY  - journal article
VL  - 67
ER  -