RT Journal Article
T1 Cathodoluminescence from implanted and anodized polycrystalline silicon films
A1 Plugaru, R.
A1 Craciun, G.
A1 Nastase, N.
A1 Méndez Martín, Bianchi
A1 Cremades Rodríguez, Ana Isabel
A1 Piqueras de Noriega, Javier
A1 Nogales Díaz, Emilio
AB Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue emission is enhanced by implantation and by slight anodization treatments. Our investigations are consistent with previous PL results and indicate that the origin of blue emission is related to quantum confinement effects. On the other hand, the effect of annealing in these samples is a reduction of the CL signal that could be related to the increase of the nanocrystals size.
PB Kluwer Academic Publishers
SN 1380-2224
YR 2000
FD 2000-01
LK https://hdl.handle.net/20.500.14352/58824
UL https://hdl.handle.net/20.500.14352/58824
LA eng
NO 1. A.G. Cullis, L.T. Canham, and P.D.J. Calcott, J. Appl. Phys. 82, 909 (1997).2. L. Tsybeskov, Ju.V. Vandyshev, and P.M. Fauchet, Phys. Rev. B49, 7821 (1994).3. H. Mimura, T. Futagi, T. Matsumoto, T. Nakamura, and Y. Kanemitsu, Jpn. J. Appl. Phys. 33, 586 (1994).4. Y. Kanemitsu and S. Okamoto, Phys. Rev. B56, R1696 (1997).5. T. Suzuki, T. Sakai, L. Zhang, and Y. Nishiyama, Appl. Phys. Lett. 66, 215 (1995).6. X. Zhao, O. Schoenfeld, J. Kusano, Y. Aoyagi, and T. Sugano, Jpn. J. Appl. Phys. 33, L649 (1994).7. G.R. Delgado, H.W.H. Lee, S.M. Kauzlarich, and R.A. Bley, Mat. Res. Soc. Symp. Proc. 452, 177 (1997).8. G. Harbeke, L. Krausbauer, E.F. Steigmeier, A.E.Widmer, H.F. Kappert, and G. Neugebauer, J. Electrochem. Soc. 120, 675 (1984).9. A.T. Voutas and M.K. Hatalis, J. Electrochem. Soc. 140, 282 (1993).10. E. Edelberg, S. Bergh, R. Naone, M. Hall, and E.S. Aydil, J. Appl. Phys. 81, 2410 (1997).11. R. Plugaru, E. Vasile, C. Cobianu, and D. Dascalu, Mat. Sci. Eng. B42, 240 (1996).12. N.M. Kalkhoran, F. Namavar, and H.P. Maruska, Appl. Phys. Lett. 63, 2661 (1993).13. Xi-Mao Bao, Hai-Qiang Yang, and Feng Yan, J. Appl. Phys. 79, 1320 (1996).
NO ©2000 Kluwer Academic Publishers.International Conference on Porous Semiconductors - Science and Technology (PSST 98)(1.1998.Mallorca).This work was supported by NATO (Grant HTECH. CRG 961392) and DGES (Project PB96-0639).
NO NATO
NO DGES
DS Docta Complutense
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