RT Journal Article
T1 Stark ladders in periodically si-delta-doped gaas
A1 Méndez Martín, María Bianchi
A1 Domínguez-Adame Acosta, Francisco
AB We study theoretically the electronic structure of periodically Si delta-doped GaAs subject to a homogeneous electric field applied along the growth direction. The space-charge potential due to delta doping is obtained by means of the Thomas-Fermi approach. Analyzing the change in the density of states in the superlattice introduced in the electric field, we observe a set of equally-spaced sharp peaks corresponding to Stark-ladder resonances. Intrinsic broadening of resonances turns out to be smaller than the level spacing in the whole range of the electric field we consider. We use the inverse participation ratio to evaluate the spatial extent of electron wave functions, and we find that the Stark-ladder spectrum is related to a strong-localization regime at high field.
PB American Physical Society
SN 0163-1829
YR 1994
FD 1994-04-15
LK https://hdl.handle.net/20.500.14352/58977
UL https://hdl.handle.net/20.500.14352/58977
LA eng
NO © 1994 The American Physical Society.The authors thank A. Sanchez and E. Macia for valuable discussions.
DS Docta Complutense
RD 6 abr 2025