RT Journal Article
T1 Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals
A1 Díaz-Guerra Viejo, Carlos
A1 Vicent López, José Luis
A1 Piqueras de Noriega, Javier
A1 Dieguez, E.
AB The influence of the doping level on the radiative recombination properties of GaSb:Se crystals has been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. CL images evidence a high dislocation density and dopant segregation around the dislocation cores in highly-doped crystals. A progressive reduction of the Se content leads to a lower dislocation density and a more uniform luminescence spatial distribution. CL spectra reveal the existence of three Se-related emission bands, centred in all the samples investigated at about 765, 740 and 719 meV, whose relative intensity is influenced by the doping level. Measurements carried out at different temperatures and excitation densities indicate that these bands can be attributed to transitions from the conduction band to deep acceptor levels.
PB IOP Publishing LTD
SN 0022-3727
YR 2007
FD 2007-01-07
LK https://hdl.handle.net/20.500.14352/51097
UL https://hdl.handle.net/20.500.14352/51097
LA eng
NO [1] Dutta P S, Bhat H L and Kumar V 1997 J. Appl. Phys. 81 5821 and references therein[2] Mohseni H, Michel E, Sandoen J, Razeghi M, Mitchel W and Brown G 1997 Appl. Phys. Lett. 71 1403[3] Bett A W and Sulima O V 2003 Semicond. Sci. Technol. 18 S184[4] Iyer S, Small L, Hedge S M, Bajaj K K and Abul-Fadl A 1995 J. Appl. Phys. 77 5902[5] Dutta P S, Méndez B, Piqueras J, Di´eguez E and Bhat H L 1996 J. Appl. Phys. 80 1112[6] Díaz-Guerra C, Vincent J, Piqueras J, Bermúdez V and Díeguez E 2005 J. Appl. Phys. 97 023504[7] Vincent J, Berm´udez V, Di´eguez E, Alves L C, Corregidor  V and Barradas N P 2005 J. Cryst. Growth 275 e537[8] Vincent J, Díaz-Guerra C, Piqueras J, Amariei A, Polychroniadis E K and Di´eguez E 2006 J. Cryst. Growth 289 18[9] Shaw D A and Thorton P R 1968 J. Mater. Sci. 3 507[10] Hidalgo P, Plaza J L, Méndez B, Di´eguez E and Piqueras J 2002 J. Phys.: Condens. Matter 14 13211[11] Doerschel J 1994 Mat. Sci. Eng. B 28 142 [12] Pal U, Fernández P, Piqueras J, Sochinskii N V and Díeguez E 1995 J. Appl. Phys. 78 1992[13] Wu M C and Chen C C 1992 J. Appl. Phys. 72 4275[14] Dutta P S, Koteswara Rao K S, Sangunni K S, Bath H L and Kumar V 1994 Appl. Phys. Lett. 65 1412[15] Kosicki B B and Paul W 1966 Phys. Rev. Lett. 17 246[16] D’Olne Campos M, Gouskov A, Gouskov L and Pons J C 1970 Phys. Status. Solid. a 2 779[17] Habbeger M A and Fan I Y 1965 Phys. Rev. 138 A598
NO © 2007 IOP Publishing Ltd.This work has been carried out in the framework of the Fifth Framework European Programme for research, Project HPRNCT 2001-00199. Support from MCYT through Projects MAT2003-00455 and MAT2003-09873-C02-01 as well as from UCM-CM (Group 910146) is also acknowledged.
NO MCYT
NO UCM-CM
DS Docta Complutense
RD 27 jul 2024