RT Journal Article
T1 Characterization of polycrystalline Cu(In,Ga)Te-2 thin films prepared by pulsed laser deposition
A1 Martil De La Plaza, Ignacio
AB Thin films of the chalcopyrite compound CuGaxIn1-xTe2 (0 less than or equal toX less than or equal to1) have been prepared by pulsed laser deposition (PLD) of prereacted material onto glass substrates. The structural and optical properties of these films have been investigated using the techniques of X-ray diffraction. (XRD), energy dispersive X-ray analysis (EDX), Rutherford back scattering (RBS), transmittance. (T), reflectance (R). Electrical characterization was performed using Hall and resistivity measurements, using the Van der Pauw technique at 300 K. The composition of the laser-deposited films was found to closely match that of the target materials and the XRD showed them to be single phase with the chalcopyrite structure and a preferred orientation along the (112) plane. The spectral dependence of the refractive index n and absorption coefficient a of the Cu(In,Ga)Te-2 thin films were determined using rigorous expressions for transmission and reflection in an air/film/substrate/air multilayer system. The CuGaxIn1-xTe2 films had optical absorption coefficients of order 10(4) cm(-1) and the energy gaps observed in these films increased from 0.96 to 1.32 eV with increasing Ga content.
PB Elsevier Science SA
SN 0040-6090
YR 2001
FD 2001-08-15
LK https://hdl.handle.net/20.500.14352/59104
UL https://hdl.handle.net/20.500.14352/59104
LA eng
NO © 2001 Elsevier Science B.V.  All rights reserved. This work has been supported by the Royal Society of London and the Deutsches Zentrum für Luft-und Raumfahrt e.V. (WEI-007-98)
NO Royal Society of London
NO Deutsches Zentrum für Luft-und Raumfahrt e.V.
DS Docta Complutense
RD 4 abr 2025