RT Book, Section
T1 Defect energy levels in Cd-based compounds
A1 Castaldini, A.
A1 Cavallini, A.
A1 Fraboni, B
A1 Piqueras De Noriega, Francisco Javier
A1 Polenta, L.
AB The influence of deep levels on the electrical and optical properties of semiconductors is widely acknowledged. We have utilized several complementary spectroscopic techniques to investigate the deep traps in undoped CdTe, CdTe:Cl and Cd0.8Zn0.2Te. The electrical activity of the defects has bean studied by DLTS, PICTS and P-DLTS while their optical properties have been characterized by cathodoluminescence, CL. Various deep levels have been found and by critically comparing the results obtained with the different techniques in different samples, we were able to achieve a better understanding of the nature of the defects.
PB IOP Publishing LTD
SN 0-7503-0372-7
YR 1996
FD 1996
LK https://hdl.handle.net/20.500.14352/60857
UL https://hdl.handle.net/20.500.14352/60857
NO (c) 1997 Institute for Scientific Information.Defect Recognition and Image Processing in Semiconductors 1995 Conference (DRIP VI). (1995. Boulder, USA).
DS Docta Complutense
RD 7 abr 2025