RT Journal Article
T1 Study of thermal treated a-Si implanted with Er and O ions
A1 Plugaru, R.
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Tate, T.J.
AB Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er-Si complexes or precipitates. Violet-blue luminescence has been found from CL images and spectra to be related to Er-Si precipitates. Emission in the green-red range is attributed to oxide species.
PB Institute of Physics
SN 0953-8984
YR 2002
FD 2002-12-16
LK https://hdl.handle.net/20.500.14352/58919
UL https://hdl.handle.net/20.500.14352/58919
LA eng
NO © 2002 IOP Publishing Ltd.This work has been supported byMCYT (ProjectMAT2000-2119). RP acknowledgesMECD for the research grant SB2000-0164.Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)
NO MCYT
NO MECD
DS Docta Complutense
RD 7 abr 2025