RT Journal Article
T1 Study of thermal treated a-Si implanted with Er and O ions
A1 Plugaru, R.
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Tate, T.J.
AB Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er-Si complexes or precipitates. Violet-blue luminescence has been found from CL images and spectra to be related to Er-Si precipitates. Emission in the green-red range is attributed to oxide species.
PB Institute of Physics
SN 0953-8984
YR 2002
FD 2002-12-16
LK https://hdl.handle.net/20.500.14352/58919
UL https://hdl.handle.net/20.500.14352/58919
LA eng
NO [1] Custer J S, Polman A and van Pinxteren H M 1994 J. Appl. Phys. 75 2809[2] Polman A, van den Hoven G N, Custer J S, Serna R and Alkemade P F A 1995 J. Appl. Phys. 77 1256[3] Priolo F, Franz´o G, Coffa S and Carnera A 1998 Phys. Rev. B 57 4443[4] van den Hove G N, Shin J H, Polman A, Lombardo S and Campisano S U 1995 J. Appl. Phys. 78 2642[5] Zanatta A R, Nunes L A O and Tessler L R 1997 Appl. Phys. Lett. 70 511[6] Fuhs W, Ulber I, Weiser G, Bresler M S, Gusev O B, Kuznetsov A N, Kudoyarova V Kh, Terukov E I and Yassievich I N 1997 Phys. Rev. B 56 9545[7] Dorofeev A M, Gaponenko N V, Bondarenko V P, Bachilo E E, Kazuchits N M, Leshok A A, Troyanova G N, Vorosov N N, Borisenko V E, Gnaser H, Bock V, Becker P and Oechsner H 1995 J. Appl. Phys. 77 2679[8] Michel J, Benton J L, Ferrante R F, Jacobson D C, Eaglesham D J, Fitzgerald E A, Xie Y H, Poate J M and Kimerling L C 1991 J. Appl. Phys. 70 2672[9] Polman A 1997 J. Appl. Phys. 82 1[10] Fujii M, Yoshida M, Hayashi S and Yamamoto K 1998 J. Appl. Phys. 84 4525[11] Citrin P H, Northrup P A, Birkhahan R and Steckl A J 2000  Appl. Phys. Lett. 76 2865[12] Kasuya A and Suezawa M 1997 Appl. Phys. Lett. 71 2728[13] Przybylinska H, Jantsch W, Suprun-Belevitch Yu,  Stepikhova M, Palmetshofer L, Hendorfer G, Kozanecki A, Wilson R J and Sealy B J 1996 Phys. Rev. B 54 2532[14] Suezawa M and Sumino K 1994 Japan. J. Appl. Phys. 33 L1782[15] Terrasi A, Franzó G, Coffa S, Priolo F, D´Acapito F and Mobilio S 1997 Appl. Phys. Lett. 70 1712[16] Nogales E, Méndez B, Piqueras J, Plugaru R, Coraci A and García J A 2002 J. Phys. D: Appl. Phys. 35 295[17] Nogales E, Méndez B, Piqueras J, Plugaru R, García J A and Tate T J 2002 Mater. Res. Soc. Symp. Proc. 692 H9.14.1[18] Piqueras J, Méndez B, Plugaru R, Craciun G, García J A and Remón A 1999 Appl. Phys. A 68 329[19] Plugaru R, Craciun G, Nastase N, Méndez B, Cremades A, Piqueras J and Nogales E 2000 J. Porous Mater. 7 291[20] Serna R, Lohmeier M, Zagwijn P M, Vlieg E and Polman A 1995 Appl. Phys. Lett. 66 1385[21] Lozykowski H J, Jadwisienczak W M and Brown I 1999 Appl. Phys. Lett. 74 1129
NO © 2002 IOP Publishing Ltd.This work has been supported byMCYT (ProjectMAT2000-2119). RP acknowledgesMECD for the research grant SB2000-0164.Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)
NO MCYT
NO MECD
DS Docta Complutense
RD 30 abr 2024