RT Journal Article
T1 Sub-bandgap absorption in Ti implanted Si over the Mott limit
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Olea Ariza, Javier
A1 Prado Millán, Álvaro Del
AB We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around 2 x 10(20) cm(-3), which is well above the Mott limit, within a 150 nm thick layer. Samples PLM-annealed at the highest energy density (1.8 J/cm(2)) exhibit good lattice reconstruction. Independent of the annealing energy density, in all of the samples we observe strong sub-bandgap absorption, with absorption coefficient values between 4 x 10(3) and 10(4) cm(-1). These results are explained in terms of the formation of an intermediate band (IB) originated from the Ti deep levels.
PB American Institute of Physics
SN 0021-8979
YR 2011
FD 2011-06-01
LK https://hdl.handle.net/20.500.14352/44237
UL https://hdl.handle.net/20.500.14352/44237
LA eng
NO © 2011 American Institute of Physics. The authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, C.A.I.s de Técnicas Físicas and spectroscopía of the Universidad Complutense de Madrid for ion implantation experiments and FTIR measurement facilities and Dr. J. Herrero (CIEMAT) for UV-VIS-IR measurements facilities. This work was partially supported by the Projects GENESIS-FV (Grant No. CSD2006-0004) funded by the Spanish Consolider National Programme, NUMANCIA II (Grant No. S-2009/ENE-1477) funded by the Regional Government of Comunidad de Madrid.
NO Comunidad de Madrid
NO Spanish Consolider  National Programme
DS Docta Complutense
RD 8 abr 2025