TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
AU  - Prado Millán, Álvaro Del
PY  - 2011
DO  - 10.1063/1.3596525
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/44237
T2  - Journal of Applied Physics
AB  - We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around...
LA  - eng
PB  - American Institute of Physics
KW  - Free Carrier Absorption
KW  - Infrared-Absorption
KW  - Silicon Layers
KW  - Titanium.
TI  - Sub-bandgap absorption in Ti implanted Si over the Mott limit
TY  - journal article
VL  - 109
ER  -