RT Journal Article
T1 β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector
A1 López, I.
A1 Castaldini, A.
A1 Cavallini, A.
A1 Nogales Díaz, Emilio
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
AB The behaviour of ß-Ga₂O₃ nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga₂O₃  nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of beta- Ga₂O₃  nanowires can be controlled by tuning the chopper frequency of the excitation light and/ or by doping of the nanowires. Non-linear behavior in characteristic current-voltage curves has been observed for Ga₂O₃  : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones.
PB Iop Publishing Ltd
SN 0022-3727
YR 2014
FD 2014-10-15
LK https://hdl.handle.net/20.500.14352/35540
UL https://hdl.handle.net/20.500.14352/35540
LA eng
NO © 2014 IOP Publishing LtdThis work has been supported by MINECO through Projects MAT 2012-31959 and Consolider CSD 2009-00013. IL acknowledges the mobility grant EEBB-I-13-05954.
NO Ministerio de Economía y Competitividad (MINECO)
NO Consolider CSD
DS Docta Complutense
RD 30 abr 2024