RT Journal Article
T1 High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
A1 Mártil de la Plaza, Ignacio
A1 González Díaz, Germán
AB Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical activations of about 100%, and mobilities as high as 4000 cm(2)/V s were obtained. Different Hall measurements show that there is no redistribution of the dopants. Photoluminescence measurements demonstrate the satisfactory recrystallization of the lattice and the excellent activation of the dopants. Electrical characteristics of n(+)p junctions made by Si implantation into Zn-doped In0.53Ga0.47As are described. Junction behavior at forward bias could be explained by recombination in the space-charge zone mechanisms, whereas different tunneling processes dominate at reverse bias. (C) 2000 American Institute of Physics. [S0021-8979(00)01807-7].
PB American Institute of Physics
SN 0021-8979
YR 2000
FD 2000-04-01
LK https://hdl.handle.net/20.500.14352/59233
UL https://hdl.handle.net/20.500.14352/59233
LA eng
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NO © American Institute of Physics. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for assistance with ion implantation. This work was partially supported by the Spanish CICYT under Grant No. TIC 98/0740.
NO Spanish CICYT
DS Docta Complutense
RD 27 abr 2024