TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2000
DO  - 10.1063/1.372369
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59233
T2  - Journal of Applied Physics
AB  - Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical...
LA  - eng
M2  - 3478
PB  - American Institute of Physics
KW  - InGaAs
KW  - InP
KW  - Luminescence
KW  - Photodiode.
TI  - High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
TY  - journal article
VL  - 87
ER  -