RT Journal Article
T1 Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
A1 Maestre Varea, David
A1 Cremades Rodríguez, Ana Isabel
A1 Herrera, Manuel
AB Electrical properties of undoped and Mn doped SnO2 microplates and rods are studied by electron beam induced current (EBIC) in a scanning electron microscope (SEM), and I-V curves acquired at room temperature. AFM measurements reveal the formation of numerous terraces at the (-101) surface of the analyzed Mn-doped SnO2 microplates, which also exhibit high carrier recombination processes at their central region, as confirmed by combined EBIC and cathodoluminescence (CL) measurements. A diffusion length for minority carriers about 205nm is obtained by EBIC measurements. Different electrical conduction mechanisms, such as Fowler-Nordheim, direct tunneling and Poole-Frenkel, are evaluated in the electrical analysis of the samples. Mn doped microplates show lower conductivity than the undoped microds. Moreover the height of the surface tunnel barrier is increased by Mn doping, as confirmed by the analysis of the I-V curves acquired under transversal configuration. A value of the relative dielectric constant E-r about 7.3 is estimated for the probed SnO2 microstructures.
PB Wiley
SN 1862-6300
YR 2018
FD 2018-10-10
LK https://hdl.handle.net/20.500.14352/13086
UL https://hdl.handle.net/20.500.14352/13086
LA eng
NO ©2018 WileyThe work was supported by MINECO/FEDER/M-ERA.Net. Cofund projects: MAT 2016-81720-REDC, MAT 2015-65274-R, and PCIN-2017-106. MHZ thanks for the financial support by PAPIIT-UNAM IN101917 project. The authors are grateful to Prof. Javier Piqueras for early attracting our research efforts to the fascinating world of the electronic microscopy related techniques and for assisting us as a dedicated mentor.
NO Ministerio de Economía y Competitividad (MINECO)/FEDER
NO PAPIIT-UNAM
DS Docta Complutense
RD 18 jul 2024