RT Journal Article
T1 Topologically protected states in δ-doped junctions with band inversion
A1 Díaz Fernández, Alvaro
A1 del Valle, N.
A1 Diaz, E.
A1 Domínguez-Adame Acosta, Francisco
AB A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty in isolating their response from that of the bulk. In this work, we propose to deposit a δ layer of donor impurities in close proximity to a topological boundary to help in detecting gapless surface states. As we will show, gapless surface states are robust against this perturbation and they enhance intraband optical transitions as measured by the oscillator strength. These results help us to understand the interplay of surface and bulk states in topological insulators.
PB Amer Physical Soc
SN 2469-9950
YR 2018
FD 2018-08-20
LK https://hdl.handle.net/20.500.14352/12266
UL https://hdl.handle.net/20.500.14352/12266
LA eng
NO ©2018 American Physical Society.The authors thank P. Rodríguez for very enlightening discussions. This research has been supported by MINECO (Grant No. MAT2016-75955). A.D.-F. acknowledges support from the UCM-Santander Program (Grant No. CT27/16-CT28/16).
NO Ministerio de Economía y Competitividad (MINECO)
NO Universidad Complutense de Madrid/Banco de Santander
DS Docta Complutense
RD 2 may 2024